Contact Resistance

Designing parameters for RF MOS cells

High Frequency / Radio Frequency / Library Design / Circuit Design / Constant Time Delay / Contact Resistance / Integrated Circuit / Contact Resistance / Integrated Circuit

Titanium nitride: A new Ohmic contact material for n-type CdS

Engineering / Applied Physics / Titanium / Crystal structure / Mathematical Sciences / Thin Film / Physical sciences / Titanium nitride / Schottky diode / Contact Resistance / Chemical bath deposition / Ohmic Contact / Thin Film / Physical sciences / Titanium nitride / Schottky diode / Contact Resistance / Chemical bath deposition / Ohmic Contact

Titanium nitride: A new Ohmic contact material for n-type CdS

Engineering / Applied Physics / Titanium / Crystal structure / Mathematical Sciences / Thin Film / Physical sciences / Titanium nitride / Schottky diode / Contact Resistance / Chemical bath deposition / Ohmic Contact / Thin Film / Physical sciences / Titanium nitride / Schottky diode / Contact Resistance / Chemical bath deposition / Ohmic Contact

B2H6 PLAD Doped PMOS Device Performance

Semiconductor Devices / Ion Implantation / Contact Resistance / Point of View

O(N) real-space method for ab initio quantum transport calculations: Application to carbon nanotube–metal contacts

Carbon Nanotube / Nanowires / Quantum Transport / Band Structure / Electron Transport / Electronic Structure / Electrical Properties / Tight Binding / Contact Resistance / Carbon Nano Tube / Ab Initio Calculation / Electronic Structure / Electrical Properties / Tight Binding / Contact Resistance / Carbon Nano Tube / Ab Initio Calculation

High temperature ohmic contacts to p-type SiC

Surface Morphology / High Temperature / Contact Resistance / Low Temperature / Transmission Line / Ohmic Contact / Elevated Temperature / Ohmic Contact / Elevated Temperature

Low resistance Ti/Al/Au ohmic backside contacts to nonpolar m-plane n-GaN (Semiconductor technology)

Doping / Annealing / OR / Plasma Etching / Vacancy / Contact Resistance / Inductively Coupled Plasma / Ohmic Contact / Lapping / Polishing / Electrical And Electronic Engineering / Electronics Letters / Contact Resistance / Inductively Coupled Plasma / Ohmic Contact / Lapping / Polishing / Electrical And Electronic Engineering / Electronics Letters

B2H6 PLAD Doped PMOS Device Performance

Semiconductor Devices / Ion Implantation / Contact Resistance / Point of View

Ta–Si contacts to n-SiC for high temperatures devices

Engineering / Comparative Study / Silicon Carbide / Physical sciences / Surface Morphology / High Temperature / CHEMICAL SCIENCES / X ray diffraction / Electrical Properties / Microstructures / Contact Resistance / Ohmic Contact / Rf-Magnetron Sputtering / Rutherford Backscattering Spectroscopy / Current-Voltage Characteristic / High Temperature / CHEMICAL SCIENCES / X ray diffraction / Electrical Properties / Microstructures / Contact Resistance / Ohmic Contact / Rf-Magnetron Sputtering / Rutherford Backscattering Spectroscopy / Current-Voltage Characteristic

High temperature ohmic contacts to p-type SiC

Surface Morphology / High Temperature / Contact Resistance / Low Temperature / Transmission Line / Ohmic Contact / Elevated Temperature / Ohmic Contact / Elevated Temperature

Contact engineering for nano-scale CMOS

Materials Engineering / Condensed Matter Physics / Nanowire / Nanotechnology / Contact Resistance

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